HY27US08561A-TPCB

DATASHEET : HY27US-SS08-16561A.pdf

TSOP-48, 256Mbit (32Mx8bit / 16Mx16bit), NAND Flash, HY27US08561A-TPCB

Product Summary

The HY27US08561A-TPCB is a 256Mbit NAND Flash. The HY27US08561A-TPCB is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The HY27US08561A-TPCB contains 2048 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected Flash cells.

Parametrics

HY27US08561A-TPCB absolute maximum ratings: (1)Ambient Operating Temperature (Commercial Temperature Range):0℃ to 70℃; (2)Ambient Operating Temperature (Extended Temperature Range):-25℃ to 85℃; (3)Ambient Operating Temperature (Industrial Temperature Range):-40℃ to 85℃; (4)Temperature Under Bias:-50℃ to 125℃; (5)Storage Temperature:-65℃ to 150℃; (6)Input or Output Voltage:-0.6V to 2.7V; (7)Supply Voltage:-0.6V to 2.7V.

Features

HY27US08561A-TPCB features: (1)high density nand flash memories; (2)NAND interface; (3)supply voltage:2.7V to 3.6V; (4)page size: (512 + 16 spare) bytes ; (5)block size: (16K + 512 spare) Bytes; (6)page READ / PROGRAM: Random access: 3.3V: 12us (max.), 1.8V: 15us (max.), Sequential access: 3.3V: 50ns (min.), 1.8V: 60ns(min.), Page program time: 200us (typ.); (7)copy back program mode:Fast page copy without external buffering; (8)fast block erase:block erase time: 2ms (Typ.); (9)status register; (10)electronic signature: 1st cycle : Manufacturer Code, 2nd cycle: Device Code; (11)Simple interface with microcontroller ; (12)automatic page 0 read at power-up option: Boot from NAND support, Automatic Memory Download.